Amorphous InSb and InAs[subscript 0.3]Sb[subscript 0.7] for long wavelength infrared detection
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Kimerling_Amorphous insb.pdf
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Author(s)
Zens, Timothy
Becla, Piotr
Kimerling, Lionel C.
Drehman, Alvin
Agarwal, Anuradha Murthy
Date Issued
May 2011
Journal
Proceedings of SPIE--the International Society for Optical Engineering; v. 8012
Publisher
SPIE
Citation
Zens, Timothy, Piotr Becla, Anuradha M. Agarwal, Lionel C. Kimerling, and Alvin Drehman. “Amorphous InSb and InAs[subscript 0.3]Sb[subscript 0.7] for long wavelength infrared detection.” In Infrared Technology and Applications XXXVII, edited by Bjørn F. Andresen, Gabor F. Fulop, and Paul R. Norton, 80123Y-80123Y-8. SPIE - International Society for Optical Engineering, 2011. © (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).
Version
Final published version
Abstract
The structural, electronic, and optical properties of amorphous InSb and InAs[subscript 0.3]Sb[subscript 0.7] films deposited on Corning glass, Al[subscript 2]O[subscript 3] CdZnTe, SiO[subscript 2]-Si, and CaF2 substrates by Radio Frequency (RF) magnetron sputtering have been studied as they relate to Mid and Long Wavelength Infrared (MWIR and LWIR) detection. Depositions at elevated substrate temperature and pressure of <10mTorr Ar show an emergence of crystalline grains with strong X-ray diffraction peaks at the (111) and (220) orientations. Electronically the amorphous InSb and InAs[subscript 0.3]Sb[subscript 0.7] films deposited at 300K show hopping conduction with resistance in InSb ranging from 44 to 1.1E8 Ω-cm at 300K and 84K respectively. Optical analysis using Fourier transform infrared spectroscopy (FTIR) show the absorption of these films has an absorption tail, the equation of which differing activation energies in InSb and InAs0.3Sb0.7. Amorphous InSb and InAs[subscript 0.3]Sb[subscript 0.7] films showed thermal responsivity in excess of 100V/W for 6μm thick films held at 233K. The maxima and minima of the responsivity are shown to correspond to the interference fringes in the film. The response is highly substrate dependent and compares favorably to other thermal detectors.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Microphotonics Center
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DOI of Published Version
https://doi.org/10.1117/12.884103
