Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides
Name
2108.07659.pdf
Description
Published version
Size
802.48 KB
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Checksum (MD5)
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Author(s)
Wang, Xirui
Yasuda, Kenji
Zhang, Yang
Liu, Song
Watanabe, Kenji
Taniguchi, Takashi
Hone, James
Fu, Liang
Jarillo-Herrero, Pablo
Date Issued
January 2022
Journal
Nature Nanotechnology
Publisher
Springer Science and Business Media LLC
Citation
Wang, Xirui, Yasuda, Kenji, Zhang, Yang, Liu, Song, Watanabe, Kenji et al. 2022. "Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides." Nature Nanotechnology.
Version
Original manuscript
Abstract
van der Waals materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit physical properties absent in the parent compounds through interlayer interactions1. Here we report on a new family of nanometre-thick, two-dimensional (2D) ferroelectric semiconductors, where the individual constituents are well-studied non-ferroelectric monolayer transition metal dichalcogenides (TMDs), namely WSe2, MoSe2, WS2 and MoS2. By stacking two identical monolayer TMDs in parallel, we obtain electrically switchable rhombohedral-stacking configurations, with out-of-plane polarization that is flipped by in-plane sliding motion. Fabricating nearly parallel-stacked bilayers enables the visualization of moiré ferroelectric domains as well as electric field-induced domain wall motion with piezoelectric force microscopy. Furthermore, by using a nearby graphene electronic sensor in a ferroelectric field transistor geometry, we quantify the ferroelectric built-in interlayer potential, in good agreement with first-principles calculations. The new semiconducting ferroelectric properties of these four new TMDs opens up the possibility of studying the interplay between ferroelectricity and their rich electric and optical properties2-5.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1038/s41565-021-01059-z
