Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework
Name
Annals of the New York Academy of Sciences - 2022 - Skorupskii - Electrical conductivity through stacking in a.pdf
Description
Published version
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1.61 MB
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Adobe PDF
Checksum (MD5)
5144fb360ddbd01149e64e3bb1f7dc99
Author(s)
Skorupskii, Grigorii
Chanteux, Géraldine
Le, Khoa N
Stassen, Ivo
Hendon, Christopher H
Dincă, Mircea
Date Issued
2022
Journal
Annals of the New York Academy of Sciences
Publisher
Wiley
Citation
Skorupskii, Grigorii, Chanteux, Géraldine, Le, Khoa N, Stassen, Ivo, Hendon, Christopher H et al. 2022. "Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework." Annals of the New York Academy of Sciences, 1518 (1).
Version
Final published version
Abstract
Metal-organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first-row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11-hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed-shell electronic configuration and is present in its trivalent state-in contrast to most conductive MOFs, which are formed by open-shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m2 /g, comparable to transition metal analogs.
MIT Department
Massachusetts Institute of Technology. Department of Chemistry
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Creative Commons Attribution-NonCommercial-NoDerivs License
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DOI of Published Version
https://doi.org/10.1111/NYAS.14906
