Seeded growth of boron arsenide single crystals with high thermal conductivity
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450. Appl. Phys. Lett. 112, 031903 (2018).pdf
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Author(s)
Tian, Fei
Song, Bai
Lv, Bing
Sun, Jingying
Huyan, Shuyuan
Wu, Qi
Mao, Jun
Ni, Yizhou
Ding, Zhiwei
Huberman, Samuel
Date Issued
January 2018
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Tian, Fei et al. “Seeded Growth of Boron Arsenide Single Crystals with High Thermal Conductivity.” Applied Physics Letters 112, 3 (January 2018): 031903 © 2018 Author(s)
Version
Final published version
Abstract
Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m⁻¹K⁻¹ at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m⁻¹K⁻¹ at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1063/1.5004200
