High active carrier concentration in n-type, thin film Ge using delta-doping
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Kimerling_High active.pdf
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Author(s)
Cai, Yan
Bessette, Jonathan T.
Kimerling, Lionel C.
Michel, Jurgen
Camacho-Aguilera, Rodolfo Ernesto
Date Issued
September 2012
Journal
Optical Materials Express
Publisher
Optical Society of America
Citation
Camacho-Aguilera, Rodolfo E. et al. “High Active Carrier Concentration in N-type, Thin Film Ge Using Delta-doping.” Optical Materials Express 2.11 (2012): 1462. © 2012 OSA
Version
Final published version
Abstract
We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 10[superscript 20]cm[superscript −3], and uniform activated dopant concentrations above 4 × 10[superscript 19]cm[superscript −3] in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of phosphorus diffusion source is shown.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1364/OME.2.001462
