Nitrogen-doped porous carbon monoliths from polyacrylonitrile (PAN) and carbon nanotubes as electrodes for supercapacitors
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Author(s) • • • • • • • • •
Wang, Yanqing
Fugetsu, Bunshi
Wang, Zhipeng
Gong, Wei
Sakata, Ichiro
Morimoto, Shingo
Hashimoto, Yoshio
Endo, Morinobu
Dresselhaus, Mildred
Terrones, Mauricio
Date Issued
January 2017
Journal
Scientific Reports
Publisher
Nature Publishing Group
Citation
Wang, Yanqing; Fugetsu, Bunshi; Wang, Zhipeng; Gong, Wei; Sakata, Ichiro; Morimoto, Shingo; Hashimoto, Yoshio; Endo, Morinobu; Dresselhaus, Mildred and Terrones, Mauricio. “Nitrogen-Doped Porous Carbon Monoliths from Polyacrylonitrile (PAN) and Carbon Nanotubes as Electrodes for Supercapacitors.” Scientific Reports 7 (January 2017): 40259 © 2017 The Author(s)
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Final published version
Abstract
Nitrogen-doped porous activated carbon monoliths (NDP-ACMs) have long been the most desirable materials for supercapacitors. Unique to the conventional template based Lewis acid/base activation methods, herein, we report on a simple yet practicable novel approach to production of the three-dimensional NDP-ACMs (3D-NDP-ACMs). Polyacrylonitrile (PAN) contained carbon nanotubes (CNTs), being pre-dispersed into a tubular level of dispersions, were used as the starting material and the 3D-NDP-ACMs were obtained via a template-free process. First, a continuous mesoporous PAN/CNT based 3D monolith was established by using a template-free temperature-induced phase separation (TTPS). Second, a nitrogen-doped 3D-ACM with a surface area of 613.8 m²/g and a pore volume 0.366 cm³/g was obtained. A typical supercapacitor with our 3D-NDP-ACMs as the functioning electrodes gave a specific capacitance stabilized at 216 F/g even after 3000 cycles, demonstrating the advantageous performance of the PAN/CNT based 3D-NDP-ACMs.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1038/srep40259