Nanostructuring magnetic thin films using interference lithography
Name
48253228-MIT.pdf
Description
Full printable version
Size
12.7 MB
Format
Adobe PDF
Checksum (MD5)
37ff9729097b0318346cb45a6e6995cb
Author(s)
Walsh, Michael E. (Michael Edward), 1975-
Advisor(s)
Henry I. Smith.
Date Issued
2000
Publisher
Massachusetts Institute of Technology
Abstract
Proliferation of data caused by rapid increases in computer power and the rise of the internet have caused an acute need for advanced data storage technology. Patterned magnetic media and magneto-resistive random-access memory (MRAM) can potentially fulfill this need. The technique of interference lithography is examined in the context of patterning ~100 nm size features. An interferometer is designed and built which will allow exposure of gratings and grids with a minimum spatial period of ~ 170 nm. Etching methods, especially ion-beam etching, or ion milling, is investigated as the optimal choice for patterning sub-100 nm features in thin magnetic films and multi-layer thin film stacks. The advantages and disadvantages of a variety of resist stacks and etch masks are presented. An optimal process for linewidth control and preservation of magnetic properties is found to include a thin phase-shifting resist stack and a tungsten hardmask.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.
Includes bibliographical references.
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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