High-Q CMOS-integrated photonic crystal microcavity devices
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Mehta-2014-High-Q CMOS-integrated.pdf
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Author(s)
Tehar-Zahav, Ofer
Sternberg, Zvi
Bafrali, Reha
Meade, Roy
Ram, Rajeev J.
Mehta, Karan Kartik
Orcutt, Jason Scott
Date Issued
February 2014
Journal
Scientific Reports
Publisher
Nature Publishing Group
Citation
Mehta, Karan K., Jason S. Orcutt, Ofer Tehar-Zahav, Zvi Sternberg, Reha Bafrali, Roy Meade, and Rajeev J. Ram. “High-Q CMOS-Integrated Photonic Crystal Microcavity Devices.” Sci. Rep. 4 (February 12, 2014).
Version
Final published version
Abstract
Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former's low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300–9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Creative Commons Attribution-Noncommercial
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DOI of Published Version
https://doi.org/10.1038/srep04077
