Electronic fingerprints of Cr and V dopants in the topological insulator Sb₂Te₃
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PhysRevB.98.115165.pdf
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Author(s) • • • • • • • •
Zhang, Wenhan
West, Damien
Lee, Seng Huat
Qiu, Yunsheng
Hor, Yew San
Zhang, Shengbai
Wu, Weida
Chang, Cui-zu
Moodera, Jagadeesh
Date Issued
September 2018
Journal
Physical Review B
Publisher
American Physical Society
Citation
Zhang, Wenhan et al. "Electronic fingerprints of Cr and V dopants in the topological insulator Sb₂Te₃." Physical Review B 98, 11 (September 2018): 115165 © 2018 American Physical Society
Version
Final published version
Abstract
By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb₂Te₃. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs.
MIT Department
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.98.115165