Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene
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1811213.pdf
Description
Accepted version
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2.7 MB
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Author(s)
Kim, Hyunseok
Lu, Kuangye
Liu, Yunpeng
Kum, Hyun S
Kim, Ki Seok
Qiao, Kuan
Bae, Sang-Hoon
Lee, Sangho
Ji, You Jin
Kim, Ki Hyun
Date Issued
2021
Journal
ACS Nano
Publisher
American Chemical Society (ACS)
Citation
Kim, Hyunseok, Lu, Kuangye, Liu, Yunpeng, Kum, Hyun S, Kim, Ki Seok et al. 2021. "Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene." ACS Nano, 15 (6).
Version
Author's final manuscript
Abstract
Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigation and utilization of electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D-2D-3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate-graphene interface, and epitaxial material for electrostatic coupling of these materials, which governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. We show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required, and provides key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene-substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1021/ACSNANO.1C03296
