Design space and origin of off-state leakage in GaN vertical power diodes
Name
07409830 (12).pdf
Size
1.96 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Wong, H.-Y.
Braga, N. A.
Mickevicius, R. V.
Jayanta Joglekar, Sameer
Palacios, Tomas
Sun, Min
Zhang, Yuhao
Yu, Lili
Date Issued
February 2016
Journal
2015 IEEE International Electron Devices Meeting (IEDM)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Zhang, Y. et al. “Design Space and Origin of Off-State Leakage in GaN Vertical Power Diodes.” 2015 IEEE International Electron Devices Meeting (IEDM), 7-9 December 2015, Washington, DC, IEEE, 2015.
Version
Author's final manuscript
Abstract
Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and literature data. Designed GaN vertical diodes demonstrate 2-4 orders of magnitude lower leakage current while supporting 3-5 times higher electric field, compared to GaN lateral, Si and SiC devices.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/IEDM.2015.7409830
