Highly sensitive Curcumin-conjugated nanotheranostic platform for detecting amyloid-beta plaques by magnetic resonance imaging and reversing cognitive deficits of Alzheimer's disease via NLRP3-inhibition
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12951_2022_Article_1524.pdf
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Author(s)
Ruan, Yuting
Xiong, Ying
Fang, Wenli
Yu, Qun
Mai, Yingren
Cao, Zhiyu
Wang, Kexi
Lei, Ming
Xu, Jiaxin
Liu, Yan
Date Issued
July 14, 2022
Publisher
BioMed Central
Citation
Journal of Nanobiotechnology. 2022 Jul 14;20(1):322
Version
Final published version
Abstract
Abstract
Background
Alzheimer's disease (AD) is the most common neurodegenerative disorder without effective therapy and lack diagnosis strategy for preclinical AD patients. There is an urgent need for development of both early diagnosis and therapeutic intervention of AD.
Results
Herein, we developed a nanotheranostics platform consisting of Curcumin (Cur), an anti-inflammatory molecule, and superparamagnetic iron oxide (SPIO) nanoparticles encapsulated by diblock 1,2-dio-leoyl-sn-glycero-3-phosphoethanolamine-n-[poly(ethylene glycol)] (DSPE-PEG) that are modified with CRT and QSH peptides on its surface. Furthermore, we demonstrated that this multifunctional nanomaterial efficiently reduced β-amyloid plaque burden specifically in APP/PS1 transgenic mice, with the process noninvasively detected by magnetic resonance imaging (MRI) and the two-dimensional MRI images were computed into three-dimension (3D) plot. Our data demonstrated highly sensitive in vivo detection of β-amyloid plaques which more closely revealed real deposition of Aβ than previously reported and we quantified the volumes of plaques for the first time based on 3D plot. In addition, memory deficits of the mice were significantly rescued, probably related to inhibition of NLR Family Pyrin Domain Containing 3 (NLRP3) inflammasomes.
Conclusions
Gathered data demonstrated that this theranostic platform may have both early diagnostic and therapeutic potential in AD.
Graphical Abstract
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1186/s12951-022-01524-4
