In-Plane Ferroelectric Tunnel Junction
Name
PhysRevApplied.11.024048.pdf
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505.18 KB
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Adobe PDF
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Author(s)
Shen, Huitao
Fu, Liang
Date Issued
February 2019
Journal
Physical Review Applied
Publisher
American Physical Society
Citation
Shen, Huitao et al. “In-Plane Ferroelectric Tunnel Junction.” Physical Review Applied 11 (2019): 024048 © 2019 The Author(s)
Version
Final published version
Abstract
Ferroelectric materals are an important platform for the realization of nonvolatile memories. So far, existing ferroelectric memory devices have utilized out-of-plane polarization in ferroelectric thin films. In this paper, we propose a type of random-access memory (RAM) based on ferroelectric thin films with in-plane polarization, called an “in-plane ferroelectric tunnel junction.” Apart from nonvolatility, lower power usage, and a faster writing operation compared with traditional dynamic RAMs, our proposal has the advantage of a faster reading operation and a nondestructive reading process, thus overcoming the write-after-read problem that exists widely in current ferroelectric RAMs. The recent discovered room-temperature ferroelectric IV-VI semiconductor thin films are a promising material platform for the realization of our proposal.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1103/PhysRevApplied.11.024048
