Iron (III) Chloride doping of large-area chemical vapor deposition graphene
Name
862075472-MIT.pdf
Description
Full printable version
Size
7.06 MB
Format
Adobe PDF
Checksum (MD5)
b6c310b6ad83650772c605e8461ce622
Author(s)
Song, Yi, Ph. D. Massachusetts Institute of Technology
Advisor(s)
Jing Kong.
Alternative Title
Iron Chloride doping of CVD graphene for transparent electrodes
Date Issued
2013
Publisher
Massachusetts Institute of Technology
Abstract
Chemical doping is an effective method of reducing the sheet resistance of graphene. This thesis aims to develop an effective method of doping large area Chemical Vapor Deposition (CVD) graphene using Iron (III) Chloride (FeCl 3). It is shown that evaporating FeCl3 can increase the carrier concentration of monolayer graphene to greater than 7x1 0 3CM2 and achieve resistances as low 72[Omega]/sq. We also evaluate other important properties of the doped graphene such as surface cleanliness, air stability, and solvent stability. Furthermore, we compare FeCl3 to three other common dopants: Gold (III) Chloride (AuCl3), Nitric Acid (I-N0 3), and TFSA ((CF 3SO2)2NH). We show that compared to these dopants, FeCl3 can not only achieve better sheet resistance but also has other key advantages including better solvent stability and better heat stability.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.
Title as it appears in MIT Commencement Exercises program, June 2013: Iron Chloride doping of CVD graphene for transparent electrodes. Cataloged from PDF version of thesis.
Includes bibliographical references (p. 39-40).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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