Growth and Properties of (001)-oriented Pb(Zr₀.₅₂Ti₀.₄₈)O₃/LaNiO₃ Films on Si(001) Substrates with TiN Buffer Layers
Name
AMMNS009.pdf
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363.5 KB
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Checksum (MD5)
6f96babe3f7c29dc546a18e7c49e5bd2
Author(s)
Zhu, Tie-Jun
Lu, Li
Thompson, Carl V.
Date Issued
January 2004
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
Pulsed laser deposition has been used to grow Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT)/LaNiO₃ (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO₂-coated Si(001) substrates, using TiN buffer layers. The effect of background gas pressure on orientation of the thin films was investigated in detail. XRD analyses showed that under optimized conditions, (001)-oriented PZT/LNO/TiN heterostructures could be grown on either Si(001) or SiO₂/Si substrates. The (001)-textured PZT films had remnant polarizations as high as 23µC/cm², and also had a low coercive field. Up to 10¹⁰ switching cycles have been achieved in these PZT films.
Subjects
pulsed laser deposition
ferroelectric thin films
PZT
crystallographic orientation
ferroelectric properties
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