Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator
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Author(s)
Liu, Wenqing
He, Liang
Xu, Yongbing
Murata, Koichi
Lang, Murong
Maltby, Nick J.
Li, Shunpu
Wang, Xuefeng
Ross, Caroline A.
Bencok, Peter
Date Issued
December 2014
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Liu, Wenqing, Liang He, Yongbing Xu, Koichi Murata, Mehmet C. Onbasli, Murong Lang, Nick J. Maltby, et al. “Enhancing Magnetic Ordering in Cr-Doped Bi[subscript 2]Se[subscript 3] Using High-T[subscript C] Ferrimagnetic Insulator.” Nano Lett. 15, no. 1 (January 14, 2015): 764–769.
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Author's final manuscript
Abstract
We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi[subscript 2–x]Cr[subscript x]Se[subscript 3], via the proximity effect using a high-T[subscript C] ferrimagnetic insulator Y[subscript 3]Fe[subscript 5]O[subscript 12]. The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced T[subscript C] of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1021/nl504480g
