Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films
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Buonassisi_Low contact.pdf
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Author(s)
Siah, Sin Cheng
Lee, Yun Seog
Segal, Yaron
Buonassisi, Anthony
Date Issued
October 2012
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Siah, Sin Cheng et al. “Low Contact Resistivity of Metals on Nitrogen-doped Cuprous Oxide (Cu2O) Thin-films.” Journal of Applied Physics 112.8 (2012): 084508. © 2012 American Institute of Physics
Version
Final published version
Abstract
Forming low-resistivity contacts on cuprous oxide (Cu[subscript 2]O) is an essential step toward demonstrating its suitability as a candidate solar cell material. We measure the contact resistivity of three noble metals (Au, Ag, and Pd) on sputtered Cu[subscript 2]O thin-films with a range of nitrogen doping levels. Using the circular transmission line model, specific contact resistivity as low as 1.1 × 10[superscript −4] Ω · cm[superscript 2] is measured for Pd contacts on heavily doped Cu[subscript 2]O films. Temperature-dependent current-voltage measurements and X-ray photoemission spectroscopy are used to determine the barrier heights formed at metal/Cu[subscript 2] Ointerfaces. Thermionic emission is observed to dominate for undoped films, whilst field emission dominates for heavily doped films, highlighting the importance of carrier concentration on contact resistivity. Finally, we demonstrate that low contact resistivity can be achieved on heavily doped Cu[subscript 2] films using Earth-abundant metals, such as Cu and Ni.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4758305
