Monolithically-integrated distributed feedback laser compatible with CMOS processing
Name
oe-25-15-18058.pdf
Description
Published version
Size
4.99 MB
Format
Adobe PDF
Checksum (MD5)
dea6a8f8b061b5feb77cd8069963460e
Author(s)
Magden, Emir Salih
Li, Nanxi
Purnawirman
Bradley, Jonathan DB
Singh, Neetesh
Ruocco, Alfonso
Petrich, Gale S
Leake, Gerald
Coolbaugh, Douglas D
Ippen, Erich P
Date Issued
2017
Journal
Optics Express
Publisher
The Optical Society
Version
Final published version
Abstract
© 2017 Optical Society of America. An optically-pumped, integrated distributed feedback laser is demonstrated using a CMOS compatible process, where a record-low-temperature deposited gain medium enables integration with active devices such as modulators and detectors. A pump threshold of 24.9 mW and a slope efficiency of 1.3 % is demonstrated at the lasing wavelength of 1552.98 nm. The rare-earth-doped aluminum oxide, used as the gain medium in this laser, is deposited by a substrate-bias-assisted reactive sputtering process. This process yields optical quality films with 0.1 dB/cm background loss at the deposition temperature of 250 ◦C, and therefore is fully compatible as a back-end-of-line CMOS process. The aforementioned laser’s performance is comparable to previous lasers having gain media fabricated at much higher temperatures (> 550 ◦C). This work marks a crucial step towards monolithic integration of amplifiers and lasers in silicon microphotonic systems.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1364/OE.25.018058
