Studies on Thermoelectric Properties of n-type Polycrystalline SnSe[subscript 1-x]S[subscript x] by Iodine Doping
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Author(s) • • • • • • •
Zhang, Qian
Chere, Eyob Kebede
Sun, Jingying
Cao, Feng
Dahal, Keshab
Chen, Shuo
Chen, Gang
Ren, Zhifeng
Date Issued
June 2015
Journal
Advanced Energy Materials
Publisher
Wiley Blackwell
Citation
Zhang, Qian, Eyob Kebede Chere, Jingying Sun, Feng Cao, Keshab Dahal, Shuo Chen, Gang Chen, and Zhifeng Ren. “Studies on Thermoelectric Properties of N-Type Polycrystalline SnSe[subscript 1-x]S[subscript x] by Iodine Doping.” Advanced Energy Materials 5, no. 12 (June 2015): n/a – n/a.
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Author's final manuscript
Abstract
Iodine-doped n-type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n-type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10[superscript 17] cm[superscript −3] (p-type) to 5.0 × 10[superscript 15] cm[superscript −3] (n-type) then to 2.0 × 10[superscript 17] cm[superscript −3] (n-type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p-type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1002/aenm.201500360