Characterization of sige-detector arrays for visible-NIR imaging sensor applications
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Hoyt_Characterization of sige.pdf
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Checksum (MD5)
9043568430f8e2e41aab3a46af4a2d03
Author(s)
Sood, Ashok K.
Richwine, Robert A.
Sood, Adam W.
Puri, Yash R.
DiLello, Nicole Ann
Hoyt, Judy L.
Akinwande, Tayo I.
Dhar, Nibir
Balcerak, Raymond S.
Bramhall, Thomas G.
Date Issued
May 2011
Journal
Proceedings of SPIE--the International Society for Optical Engineering; v. 8012
Publisher
SPIE
Citation
Ashok K. Sood ; Robert A. Richwine ; Adam W. Sood ; Yash R. Puri ; Nicole DiLello ; Judy L. Hoyt ; Tayo I. Akinwande ; Nibir Dhar ; Raymond S. Balcerak ; Thomas G. Bramhall; Characterization of SiGe-detector arrays for visible-NIR imaging sensor applications. Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801240 (May 20, 2011). Copyright © 2011 SPIE Digital Library
Version
Final published version
Abstract
SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We present results on the approach and device design for reducing the dark current in SiGe detector arrays. The electrical and optical properties of SiGe arrays at room temperature are discussed. We also discuss future integration path for SiGe devices with Si-MEMS Bolometers.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1117/12.889205
