Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering
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Buonassisi_Hall mobility.pdf
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Author(s)
Lee, Yun Seog
Winkler, Mark Thomas
Siah, Sin Cheng
Brandt, Riley E
Buonassisi, Anthony
Date Issued
May 2011
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Lee, Yun Seog et al. “Hall Mobility of Cuprous Oxide Thin Films Deposited by Reactive Direct-current Magnetron Sputtering.” Applied Physics Letters 98.19 (2011): 192115. © 2011 American Institute of Physics
Version
Final published version
Abstract
Cuprous oxide (Cu[subscript 2]O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu[subscript 2]O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu[subscript 2]O at temperatures above 250 K, reaching 62 cm[superscript 2]/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu[subscript 2]O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity
Massachusetts Institute of Technology. School of Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.3589810
