The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate
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Author(s)
Kohen, David
Bao, Shuyu
Lee, Kwang Hong
Lee, Kenneth Eng Kian
Tan, Chuan Seng
Yoon, Soon Fatt
Fitzgerald, Eugene A
Date Issued
April 2015
Journal
Journal of Crystal Growth
Publisher
Elsevier
Citation
Kohen, David, Shuyu Bao, Kwang Hong Lee, Kenneth Eng Kian Lee, Chuan Seng Tan, Soon Fatt Yoon, and Eugene A. Fitzgerald. “The Role of AsH3 Partial Pressure on Anti-Phase Boundary in GaAs-on-Ge Grown by MOCVD – Application to a 200mm GaAs Virtual Substrate.” Journal of Crystal Growth 421 (July 2015): 58–65.
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Author's final manuscript
Abstract
We demonstrate the influence of the arsine partial pressure (p(AsH3)) on the quality of a GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs quality improves with p(AsH3) used during the 100 nm thick GaAs buffer layer. By growing a GaAs buffer layer at 630 °C with p(AsH3) of 5 mbar, we obtain a smooth GaAs layer with a root mean square roughness of 4.7 Å. This GaAs layer does not contain anti-phase boundaries. With these optimized growth parameters, we fabricate a virtual GaAs substrate on a 200 mm silicon wafer as a first step towards the integration of III–V devices on silicon.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1016/j.jcrysgro.2015.04.003
