Coupling and stacking order of ReS[subscript 2] atomic layers revealed by ultralow-frequency Raman spectroscopy
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Li_Coupling and stacking.pdf
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3.73 MB
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Checksum (MD5)
77aea504cd8b524588081a711f7b9d3d
Author(s)
He, Rui
Yan, Jia-An
Yin, Zongyou
Ye, Zhipeng
Ye, Gaihua
Cheng, Jason
Lui, C. H.
Li, Ju
Alternative Title
Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy
Date Issued
February 2016
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
He, Rui et al. “Coupling and Stacking Order of ReS[subscript 2] Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy.” Nano Letters 16.2 (2016): 1404–1409.
Version
Original manuscript
Abstract
We investigate the ultralow-frequency Raman response of atomically thin ReS[subscript 2], a special type of two-dimensional (2D) semiconductors with unique distorted 1T structure. Bilayer and few-layer ReS[subscript 2] exhibit rich Raman spectra at frequencies below 50 cm[superscript –1], where a panoply of interlayer shear and breathing modes are observed. The emergence of these interlayer phonon modes indicate that the ReS[subscript 2] layers are coupled and orderly stacked. Whereas the interlayer breathing modes behave similarly to those in other 2D layered crystals, the shear modes exhibit distinctive behavior due to the in-plane lattice distortion. In particular, the two shear modes in bilayer ReS[subscript 2] are nondegenerate and clearly resolved in the Raman spectrum, in contrast to the doubly degenerate shear modes in other 2D materials. By carrying out comprehensive first-principles calculations, we can account for the frequency and Raman intensity of the interlayer modes and determine the stacking order in bilayer ReS[subscript 2].
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1021/acs.nanolett.5b04925
