Development of SiGe arrays for visible-near IR imaging applications
Name
Sood-2010-Development of SiGe arrays for visible-near IR applications.pdf
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513.86 KB
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Checksum (MD5)
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Author(s)
Sood, Ashok K.
Richwine, Robert A.
Puri, Yash R.
DiLello, Nicole Ann
Hoyt, Judy L.
Dhar, Nibir
Balcerak, Raymond S.
Bramhall, Thomas G.
Date Issued
August 2010
Journal
Proceedings of SPIE--the International Society for Optical Engineering
Publisher
SPIE
Citation
Ashok K. Sood, Robert A. Richwine, Yash R. Puri, Nicole DiLello, Judy L. Hoyt, Nibir Dhar, Raymond S. Balcerak and Thomas G. Bramhall, "Development of SiGe arrays for visible-near IR applications", Proc. SPIE 7780, 77800F (2010) © 2010 COPYRIGHT SPIE
Version
Final published version
Abstract
SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with other Silicon-based technology for defense and Commercial Applications.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1117/12.866362
