Effect of temperature on superconducting nanowire single-photon detector noise
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Berggren_Effect of temperature.pdf
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Author(s)
Bahgat Shehata, A.
Ruggeri, A.
Stellari, F.
Weger, Alan J.
Song, P.
Sunter, Kristen A
Najafi, Faraz
Berggren, Karl K
Anant, Vikas
Date Issued
August 2015
Journal
Proceedings of SPIE--the Society of Photo-Optical Instrumentation Engineers
Publisher
SPIE
Citation
Bahgat Shehata, A., A. Ruggeri, F. Stellari, Alan J. Weger, P. Song, K. Sunter, F. Najafi, Karl K. Berggren, and Vikas Anant. “Effect of Temperature on Superconducting Nanowire Single-Photon Detector Noise.” Edited by Manijeh Razeghi, Dorota S. Temple, and Gail J. Brown. Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications (August 28, 2015).
Version
Final published version
Abstract
Today Superconducting Nanowire Single-Photon Detectors (SNSPDs) are commonly used in different photon-starved applications, including testing and diagnostics of VLSI circuits. Detecting very faint signals in the near-infrared wavelength range requires not only good detection efficiency, but also very low Dark Count Rate (DCR) and jitter. For example, low noise is crucial to enable ultra-low voltage optical testing of integrated circuits. The effect of detector temperature and background thermal radiation on the noise of superconducting single-photon detectors made of NbN meanders is studied in this paper. It is shown that two different regimes can be identified in the DCR vs. bias current characteristics. At high bias, the dark count rate is dominated by the intrinsic noise of the detector, while at low bias current it is dominated by the detection of stray photons that get onto the SNSPD. Changing the detector temperature changes its switching current and only affects the high bias branch of the characteristics: a reduction of the DCR can be achieved by lowering the SNSPD base temperature. On the other hand, changing the temperature of the single-photon light source (e.g. the VLSI circuit under test) only affects the low bias regime: a lower target temperature leads to a smaller DCR. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1117/12.2188234
