Remote epitaxial interaction through graphene
Name
sciadv.adj5379.pdf
Size
1.47 MB
Format
Adobe PDF
Checksum (MD5)
930c65fe426452e9972521fa9abe8cc0
Author(s)
Chang, Celesta S
Kim, Ki Seok
Park, Bo-In
Choi, Joonghoon
Kim, Hyunseok
Jeong, Junseok
Barone, Matthew
Parker, Nicholas
Lee, Sangho
Zhang, Xinyuan
Date Issued
October 20, 2023
Journal
Science Advances
Publisher
American Association for the Advancement of Science
Citation
Celesta S. Chang et al. ,Remote epitaxial interaction through graphene.Sci. Adv.9,eadj5379(2023).
Version
Final published version
Abstract
The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the substrate surface, which still enable adatoms to follow the atomic motif of the underlying substrate. The mode of growth must be carefully defined as defects, e.g., pinholes, in two-dimensional materials can allow direct epitaxy from the substrate, which, in combination with lateral epitaxial overgrowth, could also form an epilayer. Here, we show several unique cases that can only be observed for remote epitaxy, distinguishable from other two-dimensional material-based epitaxy mechanisms. We first grow BaTiO
3 on patterned graphene to establish a condition for minimizing epitaxial lateral overgrowth. By observing entire nanometer-scale nuclei grown aligned to the substrate on pinhole-free graphene confirmed by high-resolution scanning transmission electron microscopy, we visually confirm that remote epitaxy is operative at the atomic scale. Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.
3 on patterned graphene to establish a condition for minimizing epitaxial lateral overgrowth. By observing entire nanometer-scale nuclei grown aligned to the substrate on pinhole-free graphene confirmed by high-resolution scanning transmission electron microscopy, we visually confirm that remote epitaxy is operative at the atomic scale. Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution-Noncommercial
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1126/sciadv.adj5379
