Band-engineered Ge-on-Si lasers
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Kimerling_Band-engineered.pdf
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Author(s)
Liu, Jifeng
Sun, Xiaochen
Michel, Jurgen
Kimerling, Lionel C.
Camacho-Aguilera, Rodolfo Ernesto
Cai, Yan
Date Issued
December 2010
Journal
2010 IEEE International Electron Devices Meeting (IEDM)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Liu, Jifeng, Xiaochen Sun, Rodolfo Camacho-Aguilera, Yan Cai, Jurgen Michel, and Lionel C. Kimerling. “Band-engineered Ge-on-Si lasers.” In 2010 International Electron Devices Meeting, 6.6.1-6.6.4. Institute of Electrical and Electronics Engineers, 2010. © 2010 IEEE
Version
Final published version
Abstract
We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between direct and indirect band gaps for efficient light emission. Modeling of Ge/Si double heterojunction LEDs shows that it is possible to achieve >;10% quantum efficiency even assuming an Auger coefficient 10 times larger than reports in literature. Edge-emitting Ge-on-Si waveguide LEDs have also been demonstrated at room temperature. These simulation and experimental results strongly indicate the feasibility of electrically-pumped Ge-on-Si lasers.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/IEDM.2010.5703311
