Effect of multi-field plates on the reverse breakdown and leakage characteristics of GaN-on-silicon HEMTs
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74R-Effect of Multi-Field Plates on GaN-on-Silicon HEMTs.pdf
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492.88 KB
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Author(s)
Boles, T.
Carlson, D.
Xia, L.
Kaleta, A.
McLean, C.
Jin, D.
Palacios, Tomas
Turner, George W.
Molnar, Richard J.
Date Issued
May 2014
Journal
2014 International Conference on Compound Semiconductor Manufacturing Technology
Citation
Boles, T. et al. "Effect of Multi-Field Plates on GaN-on-Silicon HEMTs
Reverse Breakdown and Leakage Characteristics." 2014 International Conference on Compound Semiconductor Manufacturing Technology, 19-22 May, 2014, Denver, Colorado, CS ManTEch, 2014.
Version
Author's final manuscript
Abstract
MACOM Technology Solutions has a continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN on silicon three terminal high voltage/high current switching devices. The initial developmental goals were for a three terminal structure that has a reverse breakdown characteristic of >1200 volts and is capable of switching 10 amperes of current, with a current breakdown target of 3000 volts. This paper presents an update on the progress of this multi-year development project against these on-state current handling, reverse leakage and breakdown goals.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
http://csmantech.org/OldSite/Conference%20Information/APfiles/2014/2014%20AP.pdf
