III-V CMOS: What have we learned from HEMTs?
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del Alamo-III-V CMOS.pdf
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Author(s)
del Alamo, Jesus A.
Kim, Dae-Hyun
Kim, Tae-Woo
Jin, Donghyun
Antoniadis, Dimitri A.
Date Issued
August 2011
Journal
Proceedings on the 2011 and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Jesús A. del Alamo et al. "III-V CMOS: What have we learned from HEMTs?" 2011 and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM), (May 2011).
Version
Author's final manuscript
Abstract
The ability of Si CMOS to continue to scale down transistor size while delivering enhanced logic performance has recently come into question. An end to Moore's Law threatens to bring to a halt the microelectronics revolution: a historical 50 year run of exponential progress in the power of electronics that has profoundly transformed human society. The outstanding transport properties of certain III-V compound semiconductors make these materials attractive to address this problem. This paper outlines the case for III-V CMOS, harvests lessons from recent research on III-V High Electron Mobility Transistors (HEMTs) and summarizes some of the key challenges in front of a future III-V logic technology.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5978379&contentType=Conference+Publications&searchField%3DSearch_All%26queryText%3DIII-V+CMOS%3A+What+have+we+learned+from+HEMTs%3F
