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Potential for neutron and proton transmutation doping of GaN and Ga 2 O 3

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sword-2021-08-12T12:41:10.original.xml (130 B)
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Author(s)
Logan, Julie V
•
Frantz, Elias B
•
Casias, Lilian K
•
Short, Michael P
•
Morath, Christian P
•
Webster, Preston T
Date Issued
2020
Journal
Materials Advances
Publisher
Royal Society of Chemistry (RSC)
Version
Final published version
Abstract

High energy proton irradiation produces long-lived p-type doping in GaN and Ga2O3.

MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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https://doi.org/10.1039/D0MA00017E
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