Potential for neutron and proton transmutation doping of GaN and Ga 2 O 3

Name

d0ma00017e.pdf

Description

Published version

Size

3.89 MB

Format

Adobe PDF

Checksum (MD5)

45962079d435c82dc503947f13cbb5d1

Original SWORD entry document

Author(s)

Logan, Julie V

•

Frantz, Elias B

•

Casias, Lilian K

•

Short, Michael P

•

Morath, Christian P

•

Webster, Preston T

Date Issued

2020

Journal

Materials Advances

Publisher

Royal Society of Chemistry (RSC)

Version

Final published version

Abstract

High energy proton irradiation produces long-lived p-type doping in GaN and Ga₂O₃.

MIT Department

Massachusetts Institute of Technology. Department of Nuclear Science and Engineering

Terms of Use

Creative Commons Attribution 3.0 unported license

Persistent DSpace Link

DOI of Published Version

https://doi.org/10.1039/D0MA00017E