Dislocation mechanism of interface point defect migration
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Kolluri-2010-Dislocation mechanis.pdf
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Author(s)
Kolluri, Kedarnath
Demkowicz, Michael J.
Date Issued
November 2010
Journal
Physical Review B
Publisher
American Physical Society
Citation
Kolluri, Kedarnath, and Michael J. Demkowicz. “Dislocation Mechanism of Interface Point Defect Migration.” Physical Review B 82.19 (2010) : 193404. © 2010 The American Physical Society
Version
Final published version
Abstract
Vacancies and interstitials absorbed at Cu-Nb interfaces are shown to migrate by a multistage process involving the thermally-activated formation, motion, and annihilation of kinks and jogs on interface misfit dislocations. This mechanism, including the energy along the entire migration path, can be described quantitatively within dislocation theory, suggesting that analysis of misfit dislocation networks may enable prediction of point defect behaviors at semicoherent heterointerfaces.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.82.193404
