Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides
Name
jacs.8b07806SyntheticLateralMetal-SemiconductorHeterostructuresofTransitionMetalDisulfides.pdf
Description
Accepted version
Size
2.52 MB
Format
Adobe PDF
Checksum (MD5)
288e82cf01dfe3ff1606a692dd792386
Author(s)
Leong, Wei Sun
Ji, Qingqing
Mao, Nannan
Wang, Haozhe
Goodman, Aaron Jacob
Vignon, Mikpongbeho Antoine
Su, Cong
Guo, Yunfan
Shen, Pin-Chun
Gao, Zhenfei
Date Issued
September 20, 2018
Journal
Journal of the American Chemical Society
Publisher
American Chemical Society (ACS)
Citation
Leong, Wei Sun et al. "Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides." Journal of the American Chemical Society 140, 39 (September 2018): 12354-12358 © 2018 American Chemical Society
Version
Author's final manuscript
Abstract
Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral heterostructures can be constructed between metallic and semiconducting transition metal disulfide (TMD) layers. Instead of edge epitaxy, polycrystalline monolayer MoS₂ in such junctions was revealed to nucleate from the vertices of multilayered VS₂ crystals, creating one-dimensional junctions with ultralow contact resistance (0.5 kΩ·μm). This lateral contact contributes to 6-fold improved field-effect mobility for monolayer MoS₂, compared to the conventional on-top nickel contacts. The all-CVD strategy presented here hence opens up a new avenue for all-2D-based synthetic electronics.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Chemistry
Massachusetts Institute of Technology. Department of Chemical Engineering
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1021/jacs.8b07806
