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  5. Correlation of silicon microroughness with electrical parameters of SOI-AS (silicon-on-insulator with active substrate)

Correlation of silicon microroughness with electrical parameters of SOI-AS (silicon-on-insulator with active substrate)

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Author(s)
Nayfeh, Hasan M. (Hasan Munir), 1974-
Advisor(s)
Dimitri A. Antoniadis.
Alternative Title
Correlation of silicon microroughness on electrical parameters of SOI-AS (silicon-on-insulator with active substrate)
Date Issued
1998
Publisher
Massachusetts Institute of Technology
Description
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
Includes bibliographical references (leaves 83-86).
Subjects
Electrical Engineering and Computer Science
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
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permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Persistent DSpace Link
http://hdl.handle.net/1721.1/47504
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