Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors
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del Alamo-Time evolution.pdf
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Author(s)
Joh, Jungwoo
del Alamo, Jesus A.
Date Issued
June 2011
Journal
IEEE International Reliability Physics Symposium 2011 (IRPS)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Joh, Jungwoo, and Jesus A. del Alamo. “Time Evolution of Electrical Degradation Under High-voltage Stress in GaN High Electron Mobility Transistors.” IEEE International Reliability Physics Symposium 2011 (IRPS). 4E.3.1–4E.3.4.
Version
Author's final manuscript
Abstract
In this work, we investigate the time evolution of electrical degradation of GaN high electron mobility transistors under high voltage stress in the OFF state. We found that the gate current starts to degrade first, followed by degradation in current collapse and eventually permanent degradation in I[subscript D]. We also found that the time evolution of gate current degradation is unaffected by temperature, while drain current degradation is thermally accelerated.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
https://doi.org/10.1109/IRPS.2011.5784511
