MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
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1811.03534.pdf
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Accepted version
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1.35 MB
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Author(s)
Lemettinen, Jori
Okumura, Hironori
Palacios, Tomas
Date Issued
April 2018
Journal
Journal of Crystal Growth
Publisher
Elsevier BV
Citation
Lemettinen, J., H. Okumura, I, Kim, M. Rudzinski, J. Grzonka, T. Palacios and S. Suihkonen. "MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC." Journal of Crystal Growth 487, no. 1 (April 2018): pages 50-56 © 2018 The Author(s)
Version
Author's final manuscript
Abstract
We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Creative Commons Attribution-NonCommercial-NoDerivs License
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DOI of Published Version
https://doi.org/10.1016/j.jcrysgro.2018.02.020
