Universality of electron mobility in LaAlO 3 /SrTiO 3 and bulk SrTiO 3
Name
1704.02026.pdf
Description
Accepted version
Size
609.27 KB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Trier, Felix
Reich, KV
Christensen, Dennis Valbjørn
Zhang, Yu
Tuller, Harry L
Chen, Yunzhong
Shklovskii, BI
Pryds, Nini
Date Issued
2017
Journal
Applied Physics Letters
Publisher
AIP Publishing
Version
Author's final manuscript
Abstract
© 2017 Author(s). Metallic LaAlO3/SrTiO3 (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, ns, is poorly understood. Here, we derive a simple expression for the three-dimensional electron density near the interface, n3D, as a function of ns and find that the mobility for LAO/STO-based interfaces depends on n3D in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with N5×1018 cm-3 background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons n3DN, the mobility collapses because scattering happens on n3D intentionally introduced donors. For LAO/STO, the polar catastrophe which provides electrons is not supposed to provide an equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO, the polar catastrophe model should be revisited.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1063/1.5001316
