Ferroelectric-gated terahertz plasmonics on graphene
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Fang_Terahertz plasmotics.pdf
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Author(s)
Jin, Dafei
Kumar, Anshuman
Hung Fung, Kin
Xu, Jun
Fang, Nicholas Xuanlai
Alternative Title
Terahertz plasmonics in ferroelectric-gated graphene
Date Issued
May 2013
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Jin, Dafei, Anshuman Kumar, Kin Hung Fung, Jun Xu, and Nicholas X. Fang. “Terahertz Plasmonics in Ferroelectric-Gated Graphene.” Appl. Phys. Lett. 102, no. 20 (2013): 201118.
Version
Original manuscript
Abstract
Inspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the two-dimensional plasmons in graphene can strongly couple with the phonon-polaritons in ferroelectrics, leading to characteristic modal wavelength of the order of 100–200 nm at low temperature and low-THz frequencies albeit with an appreciable dissipation. By patterning the ferroelectrics into different domains, one can produce compact on-chip plasmonic waveguides, which exhibit negligible crosstalk even at 20 nm separation distance. Harnessing the memory effect of ferroelectrics, low-power operation can be achieved on these plasmonic waveguides.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1063/1.4807762
