Electron-beam-induced deposition of 3-nm-half-pitch patterns on bulk Si
Name
vOven paper may 30 2011 final.pdf
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1.75 MB
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Author(s)
van Oven, J. C.
Berwald, F.
Berggren, Karl K.
Kruit, P.
Hagen, C. W.
Date Issued
September 2011
Journal
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Publisher
American Vacuum Society (AVS)
Citation
van Oven, J. C., F. Berwald, K. K. Berggren, P. Kruit, and C. W. Hagen. Electron-beam-induced Deposition of 3-nm-half-pitch Patterns on Bulk Si. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 29, no. 6 (2011): 06F305.
Version
Author's final manuscript
Abstract
This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern, and thus avoid proximity effects; (2) an additional delay was added between exposures to permit diffusion of reactants into the exposed area; and (3) the exposures were phase-synchronized to the dominant noise source (the 50-Hz line voltage) to minimize the effect of noise. The reasons these steps led to significant improvements in patterning resolution are discussed.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
https://doi.org/10.1116/1.3640743
