CNT-based gas ionizers with integrated MEMS gate for portable mass spectrometry applications
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Akinwande_CNT-based gas ionizers with integrated.pdf
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Author(s)
Velasquez-Garcia, Luis Fernando
Gassend, Blaise
Akinwande, Akintunde Ibitayo
Date Issued
June 2009
Journal
Proceedings of the 15th International Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Velasquez-Garcia, L.F., B. Gassend, and A.I. Akinwande. “CNT-based Gas Ionizers with Integrated MEMS Gate for Portable Mass Spectrometry Applications.” IEEE, 2009. 1646–1649. © 2009 IEEE.
Version
Final published version
Abstract
We report the fabrication and experimental characterization of a novel low-cost carbon nanotube (CNT)-based electron impact ionizer (EII) with integrated gate for portable mass spectrometry applications. The device achieves low-voltage ionization using sparse forests of plasma-enhanced chemical vapor deposited (PECVD) CNTs field emitter tips, and a proximal gate with open apertures to facilitate electron transmission. The gate is integrated using a deep reactive ion etched (DRIE) spring-based high-voltage MEMS packaging technology. The device also includes a high aspect-ratio silicon structure (mufoam) that facilitates sparse CNT growth and limits the electron current per emitter. The devices were tested as field emitters in high vacuum (10-8 Torr). Electron emission starts at a gate voltage of 110 V, and reaches a current of 9 uA at 250 V (2.25 mW) with more than 55% of the electrons transmitted through the gate apertures. The devices were also tested as electron impact ionizers using argon. The experimental data demonstrates that the CNT-EIIs can operate at mtorr-level pressures while delivering 60 nA of ion current at 250 V with about 1% ionization efficiency.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/SENSOR.2009.5285776
