Three-terminal resistive switch based on metal/metal oxide redox reactions
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Beach_Three-terminal.pdf
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2.08 MB
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Author(s)
Huang, Mantao
Tan, Aik Jun
Mann, Maxwell
Bauer, Uwe
Ouedraogo, Raoul O.
Beach, Geoffrey Stephen
Date Issued
August 2017
Journal
Scientific Reports
Publisher
Nature Publishing Group
Citation
Huang, Mantao, et al. “Three-Terminal Resistive Switch Based on Metal/metal Oxide Redox Reactions.” Scientific Reports 7, 1 (August 2017): 7452 © 2017 The Author(s)
Version
Final published version
Abstract
A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition between cobalt and cobalt oxide controlled by a voltage applied to the top electrode. The kinetics of the oxidation and reduction process are examined through time- and temperature-dependent transport measurements. It is shown that that reversible voltage induced lateral resistance switching with a ratio of 10 3 can be achieved at room temperature. The reversible non-volatile redox reaction between metal and metal oxide may provide additional degrees of freedom for post-fabrication control of properties of solid-state materials. This type of three-terminal device has potential applications in neuromorphic computing and multilevel data storage, as well as applications that require controlling a relatively large current.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution 4.0 International License
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1038/s41598-017-06954-x
