Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures
Name
PhysRevB.96.201301.pdf
Size
1.51 MB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Zhao, Weiwei
Garlow, Joseph A.
Wu, Lijun
Zhu, Yimei
Chan, Moses H. W.
Li, Mingda
Song, Qichen
Liu, Te Huan
Moodera, Jagadeesh
Chen, Gang
Date Issued
November 2017
Journal
Physical Review B
Publisher
American Physical Society (APS)
Citation
Li, Mingda et al. “Dirac-Electron-Mediated Magnetic Proximity Effect in Topological Insulator/magnetic Insulator Heterostructures.” Physical Review B 96, 20 (November 2017): 201301(R) © 2017 American Physical Society
Version
Final published version
Abstract
The possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. Here we report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi0.2Sb0.8)2Te3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screening is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Laboratory for Nuclear Science
Massachusetts Institute of Technology. Plasma Science and Fusion Center
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PHYSREVB.96.201301
