A CMOS-integrated quantum sensor based on nitrogen–vacancy centres
Name
1810.01056.pdf
Description
Submitted version
Size
4.13 MB
Format
Adobe PDF
Checksum (MD5)
8b45bc26f64a273e6c4de062a51bc19d
Author(s)
Kim, Donggyu
Ibrahim, Mohamed I.
Foy, Christopher C.
Trusheim, Matthew E
Han, Ruonan
Englund, Dirk R.
Date Issued
July 2019
Journal
Nature Electronics
Publisher
Springer Science and Business Media LLC
Citation
Kim, Donggyu et al. “A CMOS-integrated quantum sensor based on nitrogen–vacancy centres.” Nature Electronics, 2, 7 (July 2019): 284–289 © 2019 The Author(s)
Version
Original manuscript
Abstract
The nitrogen–vacancy (NV) centre in diamond can be used as a solid-state quantum sensor with applications in magnetometry, electrometry, thermometry and chemical sensing. However, to deliver practical applications, existing NV-based sensing techniques, which are based on bulky and discrete instruments for spin control and detection, must be replaced by more compact designs. Here we show that NV-based quantum sensing can be integrated with complementary metal–oxide–semiconductor (CMOS) technology to create a compact and scalable platform. Using standard CMOS technology, we integrate the essential components for NV control and measurement—microwave generator, optical filter and photodetector—in a 200 μm × 200 μm footprint. With this platform we demonstrate quantum magnetometry with a sensitivity of 32.1 μT Hz−1/2 and simultaneous thermometry.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Lincoln Laboratory
Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1038/S41928-019-0275-5
