Transport signatures of Fermi surface topology change in BiTeI
Name
PhysRevB.91.201104.pdf
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1.3 MB
Format
Adobe PDF
Checksum (MD5)
1eb1ebe274ab035da518ae8207c62e16
Author(s)
Ye, Linda
Kagawa, Fumitaka
Tokura, Yoshinori
Checkelsky, Joseph George
Date Issued
May 2015
Journal
Physical Review B
Publisher
American Physical Society
Citation
Ye, Linda, Joseph G. Checkelsky, Fumitaka Kagawa, and Yoshinori Tokura. “Transport Signatures of Fermi Surface Topology Change in BiTeI.” Physical Review B 91.20 (2015): n. pag. © 2015 American Physical Society
Version
Final published version
Abstract
We report a quantum magnetotransport signature of a change in the Fermi surface topology in the Rashba semiconductor BiTeI with a systematic tuning of the Fermi level E[subscript F]. Beyond the quantum limit, we observe a marked increase (decrease) in electrical resistivity when E[subscript F] is above (below) the Dirac node that we show originates from the Fermi surface topology. This effect represents a measurement of the electron distribution on low-index (n = 0, −1) Landau levels and is uniquely enabled by the finite bulk k[subscript z] dispersion along the c axis and strong Rashba spin-orbit coupling strength of the system. The Dirac node is independently identified by Shubnikov–de Haas oscillations as a vanishing Fermi surface cross section at k[subscript z] = 0. Additionally, we find that the violation of Kohler's rule allows a distinct insight into the temperature evolution of the observed quantum magnetoresistance effects.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.91.201104
