Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon
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Kimerling_Monolithically integrated.pdf
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Author(s)
Wang, Jianfei
Zens, Timothy
Hu, Juejun
Becla, Piotr
Kimerling, Lionel C.
Agarwal, Anuradha Murthy
Date Issued
May 2012
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Wang, Jianfei, Timothy Zens, Juejun Hu, Piotr Becla, Lionel C. Kimerling, and Anuradha M. Agarwal. “Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon.” Applied Physics Letters 100, no. 21 (2012): 211106. © 2012 American Institute of Physics
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Final published version
Abstract
In this paper, we present experimental demonstration of a resonant-cavity-enhanced mid-infrared photodetector monolithically fabricated on a silicon substrate. Dual-band detection at 1.6 μm and 3.7 μm is achieved within a single detector pixel without cryogenic cooling, by using thermally evaporated nanocrystalline PbTe as the photoconductive absorbers. Excellent agreement between theory and experiment is confirmed. The pixel design can potentially be further extended to realizing multispectral detection.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
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DOI of Published Version
https://doi.org/10.1063/1.4722917
