On Enhancing Data Integrity with Low-cost Retention-Refillable Programming Scheme
Name
3605098.3635905.pdf
Size
1.72 MB
Format
Adobe PDF
Checksum (MD5)
0678275bd8500b9a5201aa56ef3df73d
Author(s)
Chiang, Kun-Chi
Li, Yung-Chun
Wang, Wei-Chen
Shih, Wei-Kuan
Date Issued
April 8, 2024
Publisher
ACM
Citation
Chiang, Kun-Chi, Li, Yung-Chun, Wang, Wei-Chen and Shih, Wei-Kuan. 2024. "On Enhancing Data Integrity with Low-cost Retention-Refillable Programming Scheme."
Version
Final published version
Abstract
The retention error has become one of the most challenging reliability issues of flash memory due to the shrinking of the technology nodes. To enhance data integrity by resolving the retention error issues for 3D MLC flash memory devices (e.g., SSDs and SD cards), many excellent works that exploited in-place reprogramming and data refreshing concepts have been proposed in recent years. However, these approaches could result in additional issues, such as programming disturbance and performance overhead (e.g., unavoidable data refreshing and a larger amount of program and verify shots). This work is motivated by the need to explore a low-cost solution for resolving retention error issues without incurring negative impacts caused by conventional refresh-based and in-place reprogramming approaches. As a result, this work exploits the characteristics of the cell's Vt distribution and proposes the novel concept of "retention-refilling" to enhance data integrity. With such an idea, a retention-refillable programming scheme is proposed to improve flash reliability and mitigate performance overheads by trading data refreshing with retention-refilling. The capability of the proposed scheme is evaluated by a series of experiments, for which we have very encouraging results.
Description
SAC '24: Proceedings of the 39th ACM/SIGAPP Symposium on Applied Computing April 8–12, 2024, Avila, Spain
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1145/3605098.3635905
