Integrated Circuits Based on Bilayer MoS
Name
Kong_Integrated circuits.pdf
Size
1.6 MB
Format
Adobe PDF
Checksum (MD5)
72b2291f8f053aacae370ec503d9cafb
Author(s) • • • • • • • • •
Wang, Han
Yu, Lili
Lee, Yi-Hsien
Shi, Yumeng
Hsu, Allen Long
Chin, Matthew L.
Li, Lain-Jong
Dubey, Madan
Kong, Jing
Palacios, Tomas
Date Issued
September 2012
Journal
Nano Letters
Publisher
American Chemical Society
Citation
Wang, Han, Lili Yu, Yi-Hsien Lee, Yumeng Shi, Allen Hsu, Matthew L. Chin, Lain-Jong Li, Madan Dubey, Jing Kong, and Tomas Palacios. “ Integrated Circuits Based on Bilayer MoS 2 Transistors .” Nano Lett. 12, no. 9 (September 12, 2012): 4674–4680.
Version
Author's final manuscript
Abstract
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene’s advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1021/nl302015v