Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1−x]/Ge interface
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Fitzgerald_Conduction band.pdf
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Author(s)
Mazzeo, G.
Yablonovitch, E.
Jiang, H. W.
Bai, Yu
Fitzgerald, Eugene A.
Date Issued
May 2010
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Mazzeo, G., E. Yablonovitch, H. W. Jiang, Y. Bai, and E. A. Fitzgerald. “Conduction band discontinuity and electron confinement at the Si[sub x]Ge[sub 1−x]/Ge interface.” Applied Physics Letters 96, no. 21 (2010): 213501. © 2010 American Institute of Physics
Version
Final published version
Abstract
Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate is predicted to allow the confinement of electrons in the germanium, and the conduction band profile of germanium rich heterostructures allow the implementation of g-factor modulation devices not possible in Silicon. We here prove that electrons can indeed be trapped at the Si[subscript 0.1]Ge[subscript 0.9]/Ge interface and we measure the height of the energy barrier to 0.55±0.05 eV by measuring the tunneling time of electrons as a function of the electric field.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.3432066
