Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices
Name
Gogineni-2009-Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices.pdf
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818.27 KB
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Checksum (MD5)
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Author(s)
Jagannathan, Basanth
Wang, Jing
Sweeney, Susan
Li, Hongmei
Gogineni, Usha
del Alamo, Jesus A.
Date Issued
June 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Gogineni, U. et al. “Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices.” Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE. 2009. 163-166. © 2009 IEEE
Version
Final published version
Abstract
The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the substrate ring; as well as on the number of sides that the device is surrounded by the contact ring. We find that the unilateral gain is impacted by the substrate resistance (R[subscript sx]) through the gate-body capacitance feedback path at low to medium frequencies (< 20 GHz). At mm wave frequencies, the unilateral gain is affected by the R[subscript sx] through the drain-body capacitance pole, and deviates from the ideal -20 dB/dec slope. The impact of substrate resistance on f[subscript T], maximum available gain, high frequency noise and power characteristics of the devices is minimal.
Subjects
RF CMOS
Noise
Substrate resistance
maximum oscillation frequency
power gain
unilateral gain
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/RFIC.2009.5135513
