Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors
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Author(s)
Ji, Jongho
Yang, Jeong Yong
Lee, Sangho
Kim, Seokgi
Yeom, Min Jae
Lee, Gyuhyung
Shin, Heechang
Bae, Sang-Hoon
Ahn, Jong-Hyun
Kim, Sungkyu
Date Issued
January 19, 2024
Journal
Communications Engineering
Publisher
Springer Science and Business Media LLC
Citation
Ji, J., Yang, J.Y., Lee, S. et al. Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors. Commun Eng 3, 15 (2024).
Version
Final published version
Abstract
Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices. The conventional method for fabricating heterostructures is by heteroepitaxy, in which epitaxy is performed on crystallographically different materials. However, epitaxial limitations in monolithic growth of dissimilar materials prevent implementation of high quality heterostructures, such as complex-oxides on conventional semiconductor platforms (Si, III-V and III-N). In this work, we demonstrate gallium nitride (GaN) high-electron-mobility transistors with crystalline complex-oxide material enabled by heterogeneous integration through epitaxial lift-off and direct stacking. We successfully integrate high-κ complex-oxide SrTiO3 in freestanding membrane form with GaN heterostructure via a simple transfer process as the gate oxide. The fabricated device shows steep subthreshold swing close to the Boltzmann limit, along with negligible hysteresis and low dynamic on-resistance, indicating very low defect density between the SrTiO3 gate oxide and GaN heterostructure. Our results show that heterogeneous integration through direct material stacking is a promising route towards fabricating functional heterostructures not possible by conventional epitaxy.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1038/s44172-024-00161-z
