Resistive Switching Mechanisms on TaO[subscript x] and SrRuO[subscript 3] Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
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Tuller_Resistive switching.pdf
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Author(s)
Moors, Marco
Wedig, Anja
Bäumer, Christoph
Skaja, Katharina
Arndt, Benedikt
Dittmann, Regina
Waser, Rainer
Valov, Ilia
Adepalli, Kiran Kumar
Lu, Qiyang
Alternative Title
Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
Date Issued
January 2016
Journal
ACS Nano
Publisher
American Chemical Society (ACS)
Citation
Moors, Marco et al. “Resistive Switching Mechanisms on TaO[subscript X] and SrRuO[subscript 3] Thin-Film Surfaces Probed by Scanning Tunneling Microscopy.” ACS Nano 10.1 (2016): 1481–1492. © 2016 American Chemical Society
Version
Author's final manuscript
Abstract
The local electronic properties of tantalum oxide (TaO[subscript x], 2 ≤ x ≤ 2.5) and strontium ruthenate (SrRuO[subscript 3]) thin-film surfaces were studied under the influence of electric fields induced by a scanning tunneling microscope (STM) tip. The switching between different redox states in both oxides is achieved without the need for physical electrical contact by controlling the magnitude and polarity of the applied voltage between the STM tip and the sample surface. We demonstrate for TaO[subscript x] films that two switching mechanisms operate. Reduced tantalum oxide shows resistive switching due to the formation of metallic Ta, but partial oxidation of the samples changes the switching mechanism to one mediated mainly by oxygen vacancies. For SrRuO[subscript 3], we found that the switching mechanism depends on the polarity of the applied voltage and involves formation, annihilation, and migration of oxygen vacancies. Although TaO[subscript x] and SrRuO[subscript 3] differ significantly in their electronic and structural properties, the resistive switching mechanisms could be elaborated based on STM measurements, proving the general capability of this method for studying resistive switching phenomena in different classes of transition metal oxides.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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DOI of Published Version
https://doi.org/10.1021/acsnano.5b07020
